Prediction of hot zone-center optical phonons in laser-irradiated molybdenum disulfide with a semiconductor multitemperature model

A previous multitemperature model (MTM) resolving phonon temperatures at the polarization level and measurements have uncovered remarkable nonequilibrium among different polarizations in laser-irradiated graphene metals. Here, we develop a semiconductor-specific MTM (SC-MTM) by including electron-hole pair generation, diffusion, recombination, show that polarization-level does not yield observable polarization-based molybdenum disulfide (${\mathrm{MoS}}_{2}$). In contrast, appreciable is predicted between zone-center optical phonons other modes. The momentum-based ratio found to increase with decreasing laser spot size interaction substrate. This finding relevant understanding of energy relaxation process two-dimensional optoelectronic devices Raman thermal transport.